国家/地区 韩国（34） 中国（31） 美国（29） 世界知识产权组织（20） 日本（15） 欧洲专利局（EPO）（7） 台湾（6） 法国（4）
IPC部 C（72）
IPC大类 C23（72）
IPC小类 C23C（72）
IPC C23C016/26（72）
发明人 HONG B H（7） FAN F Y（5） FAN S（5）
JIANG K（5） LIN X（5） XIAO L（5）
AHN J（4） AHN J H（4） CHOI I S（4）
LEE K J（4） LIN X Y（4） WANG Y（4）
BAE S（3） BAE S K（3） HONG B（3）
公开年 2012（37） 2013（21） 2011（14）
申请年 2011（72）
专利权人 UNIV SUNGKYU.（6） UNIV SUNGKYU.（6） HON HAI PREC.（5） HONGFUJIN PR.（5）
KOREA ADV IN.（5） UNIV TSINGHU.（5） CENT NAT REC.（4） SAMSUNG ELEC.（4）
SAMSUNG TECH.（4） GRAPHENE SQU.（3） HANWHA TECHW.（3） KOREA ADVANC.（3）
PANASONIC CO.（3） CHINESE ACAD.（2） CNRS CENT NA.（2） HAIYANGWANG .（2）
INST NAT POL.（2） POSTECH ACAD.（2） UNIV YONSEI .（2） UNIV ZHEJIAN.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Transparent conductive component used for touch panel, has component main portion that comprises primary region which is comprised with graphene layer, colored layer and base material in overlapped state.

MINAMI N, INOUE M, TAMARU H, TSUJIMOTO H, INOUE T

Preparation of doped graphene involves cleaning metal material and drying, subjecting dried substrate in reaction chamber, introducing protective gas, heating, and introducing gaseous carbon-containing and nitrogen-containing materials.

WANG Y, YUAN X, ZHOU M

Exterior product is obtained by spreading graphene solution obtained by manufacturing mixture of graphene, water and ethanol on surfaces of exterior product, evaporating and coating graphene solution on exterior product.

SEONG K L

Formation method of thin film for graphene film of hexagonal boron nitride involves polishing the surface of substrate consists of metal or metallic compound, and forming thin film from monoatomic layer or diatomic layers.

ODAWARA G, OSHIMA C, HIBINO H

Apparatus for synthesizing graphene film on copper foil, has quasi enclosed substrate holder including open side, and cap placed over open side, where substrate is located inside holder for graphene film synthesis.

BOI A A, LI X, BOL A A