国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） H01L（2）
IPC C23C016/34（5）
发明人 YANG H（2）
公开年 2023（5）
申请年 2022（3） 
专利权人

Preparation method of in-situ packaged two-dimensional material in e.g. electronics field, involves forming first material layer by cleavage of first material on substrate, and forming second material layer between first layer and substrate.

GAO H, YANG H, BIAN C

Preparing gallium nitride nanowire/graphene composite material useful in sterilizing device, comprises providing substrate, forming layer of gold film on positive and negative surfaces of substrate, growing gallium nitride nanowire on substrate covered with gold film, and depositing graphene film.

LI J, FU Y, DAI Y, LIN C, WANG Z, LIN L, YANG Y, HU Y, XU Z, FU Z

Growing single crystal III-nitrides on ceramic substrate comprises e.g. depositing filling material on surface of ceramic substrate, grinding and polishing to obtain smooth surface, and/or forming aluminum-oxygen compound layer or two-dimensional material layer on surface.

GUO F, YANG H, CHEN Z, WU J, SHEN B, YANG X

Normally-closed gallium nitride integrated device of large threshold voltage used in mobile phone, has sub-gate composed of gate layer connected through graphene film electrode to form series-parallel mixed double high frequency characteristics high electron mobility transistor integrated structure.

LUO M, CHENG T, WANG X, ZU Y, YU C

Flexible pressure sensor based on two-dimensional quantum tunneling force-sensitive mechanism, has conformal carbon nano-film composed of graphene-structure of nano-wall and flexible substrate.

CHENG G, WEI D