国家/地区 中国（5） 美国（3） 世界知识产权组织（3）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C23C016/26（5） C01B031/04（4） C23C016/56（3）
B82Y030/00（2） B82Y040/00（2） C01B032/186（2）
C23C016/01（2） C23C016/02（2）
发明人 ZHANG K（5）
公开年 2012（3）
申请年 2012（3） 
专利权人 UNIV XIDIAN（3） ZHANG K（3） DENG P（2） GUO H（2）
LEI T（2） ZHANG Y（2）

Preparing copper/graphene composite material involves using acetone, ethanol and de-ionized water for washing rolled copper foil, ultrasonic cleaning rolled copper foil with hydrochloric acid, and then cleaning copper foil.

ZHANG K, SONG R, LIU P, LI W, CHEN X, MA F, HE D, LIU X

Growing multilayer graphene film used to form flexible transparent electrode, comprises disposing carbonizing catalyst in reaction chamber, flowing gaseous carbon source/weak oxidizing vapor over catalyst surface, and cooling.

LOH K P, ZHANG K, CASTRO A H, LOH K

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y