国家/地区 中国（14）
IPC部 C（14）
IPC大类 C23（14）
IPC小类 C30B（14）
IPC C23C016/26（11） C30B029/02（8） C01B031/04（6）
B82Y040/00（5） C30B025/18（5） B82Y030/00（4）
C23C016/02（3） C30B025/02（3） C01B031/02（2）
C01B032/186（2） C23C016/458（2） C23C016/56（2）
C30B025/00（2） C30B025/12（2）
发明人 LEI T（5） ZHANG Y（5） DENG P（4）
GUO H（4） ZHANG K（4） DING G（3）
XIE X（3） BI H（2） HUANG F（2）
JIANG M（2） JIN H（2） LIN T（2）
LV J（2） PENG P（2） WANG H（2）
公开年 2012（14）
申请年 2012（10）  2011（4） 
专利权人 UNIV XIDIAN（5） CHINESE ACAD.（3） CHINESE ACAD.（2） DING G（2）
PENG P（2） SHANGHAI INS.（2） XIE X（2）

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Three-dimensional graphene tube for use in e.g. solar cell, has diameter and length, in preset range, and has preset number of layers.

BI H, HUANG F, LIN T

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Three-dimensional graphene/metal line or metal wire composite structure for solar cell and storage battery, is formed by growing graphene on outer surface of metal line by coating carbon source using chemical vapor deposition method.

BI H, HUANG F, LIN T

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Device for quick and continuous preparation of graphene film with a large size has heat source, roll-to-roll unit, and gas bottle, where roll-to-roll unit drives catalytic metal thin layer to move, and crosses airtight quartz box.

LI C, WANG Z

Bracket for growing graphene, has inner edge and outer edge which are wound more than circle to form structure more than one layer.

JIN H, PENG P