国家/地区 中国（2） 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC C23C016/56（4）
发明人
公开年 2021（4）
申请年 2020（3） 
专利权人

Manufacturing transition metal dichalcogenide-graphene heterojunction electrode comprises transferring graphene to electrode, depositing transition metal layer on graphene-transferred electrode and injecting plasma-treated sulfur gas.

KIM T S, SEOK H H, LEE I, WOO K H

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Formation of graphene layer used as material in e.g. flexible technologies, involves forming polymer layer on catalytic substrate by chemical vapor deposition of graphene precursor, and raising temperature to induce cyclodehydrogenation.

SINITSKII A, TORRES A, LI G

Single metal atom used as catalyst, is supported on three-dimensional porous graphene which is prepared by using nanoporous metal material as template.

XI W