国家/地区 世界知识产权组织（4） 日本（3）
IPC部 C（4） H（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4） C01B032/186（3） H01L021/02（2）
H01L021/205（2） H05H001/46（2）
发明人 MATSUMOTO T（3） IFUKU R（2）
公开年 2021（2） 2022（2）
申请年 2021（4）
专利权人 TOKYO ELECTRON LTD（4）

Forming film by carrying substrate having recess into processing container, placing on mounting table provided in processing container, using plasma of mixed gas containing inert gas and carbon-containing gas, while applying high frequency bias, and forming graphene film on substrate.

SUGIURA M, MATSUMOTO T

Substrate processing method for processing substrate, involves performing first plasma processing while holding carried-in substrate in first position, and performing second plasma processing in state where substrate support pin is lowered and substrate is held at second position.

WADA M, KABUKI N, IFUKU R, MATSUMOTO T

Method for forming film e.g. graphene film on substrate, involves supplying aromatic hydrocarbon gas having functional group, to substrate on which base film is formed, and activating aromatic hydrocarbon gas adsorbed on surface of base film by plasma of reaction gas containing rare gas.

MATSUMOTO T, IFUKU R

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R