国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 DU C（4）
公开年 2013（3）
申请年 2013（2） 
专利权人 CHONGQING IN.（3） CHONGQING MO.（3） CHINESE ACAD.（2）

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y

Preparation device of graphene, has growth chamber which is connected with vacuum-pumping device, and growth substrate of growth chamber is wound on coil that is connected with alternating current source.

SHI H, LI Z, DU C, ZHANG W

Roll-to-roll graphene preparation device, comprises e.g. a sealed vacuum chamber and a roller comprising a driving roll for guiding graphene growing foil, growing roll for growing graphene and winding roll for winding graphene growing foil.

ZHANG W, LI Z, DU C, SHI H