国家/地区 美国（30） 中国（18） 韩国（16） 世界知识产权组织（16） 日本（14） 欧洲专利局（EPO）（9） 台湾（6） 西班牙（4）
IPC部 B（31）
IPC大类 B82（31）
IPC小类 B82Y（31）
IPC B82Y040/00（31）
发明人 AHN J（3） DING G（3） FAN F Y（3）
FAN S（3） HONG B（3） HONG B H（3）
JIANG K（3） LIN X（3） LIN X Y（3）
XIAO L（3） XIE X（3） AHN J H（2）
CHIBA G（2） CHIBA Y（2） CHOE P（2）
公开年 2012（31）
申请年 2011（19）  2012（12） 
专利权人 SAMSUNG ELEC.（4） CHINESE ACAD.（3） HANWHA TECHW.（3） HON HAI PREC.（3）
HONGFUJIN PR.（3） SAMSUNG TECH.（3） SHANGHAI INS.（3） UNIV SUNGKYU.（3）
UNIV SUNGKYU.（3） UNIV SUNGKYU.（3） UNIV TSINGHU.（3） DING G（2）
EMPIRE TECHN.（2） HANWHA AEROS.（2） JX NIPPON MI.（2） KOREA ADV IN.（2）
NIPPON MININ.（2） NIPPON MININ.（2） UNIV SUNGKYU.（2） XIE X（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Method for non-destructively transferring graphene, involves nondestructively combining graphene coated with media with target substrate, and removing media to transfer graphene to target substrate nondestructively.

REN W, GAO L, MA L, CHENG H

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making a graphene composite structure used as electrode involves growing a graphene film on the first surface of the metal substrate by a chemical vapor deposition method; and etching the metal substrate from the second surface.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Patterning graphene involves forming passivation material pattern on growth substrate, defining inverse pattern of exposed surface that facilitates graphene growth; and supplying carbon-containing gas to pattern to form patterned graphene.

HOFMANN M, KONG J