国家/地区 美国（5） 中国（4） 日本（3） 韩国（3） 欧洲专利局（EPO）（2） 台湾（2） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B032/182（6）
发明人
公开年 2018（5）
申请年 2017（6）
专利权人

Manufacturing artificial graphite involves placing graphene film on surface of base, placing graphene film/base composite structure in reaction chamber and graphitizing carbon layer/graphene film/base composite structure in inert gas.

LIU P, ZHAO W, WANG J, JIANG K, FAN S

Manufacturing graphene film used for manufacturing pellicle involves coating graphene with protective film, removing base material by wet etching with etching liquid and dissolving protective film using solvent having lower surface tension.

YANASE Y, YANASE M, LIANG L

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Thermal treatment apparatus for high quality graphene synthesis, has catalyst metal film where outlet transferred from down direction diversion roller to winding roller are passed through feed roller in deposition chamber.

KIM Y K, YONG K K, KIM Y, KI K Y

Production of graphene covalently functionalized with organic molecule for manufacture of e.g. electronics involves bombarding surface of system containing graphene and non-metallic substrate with beam of noble gas ions and heating.

ACEITUNO BUENO R, MARTINEZ RUIZ J I, LUCCAS R F, LOPEZ FAGUNDEZ M F, MOMPEAN GARCIA F, GARCIA HERNANDEZ M D M, MARTIN GAGO J A, BUENO R, RUIZ J I, FAGUNDEZ M F, GARCIA F, HERNANDEZ M D M, GAGO J A

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X