国家/地区 韩国（4）
IPC部 B（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人 LEE C（2） LEE C S（2） SHIN H（2）
SHIN H J（2） SHIN K（2） SHIN K W（2）
公开年 2013（2）
申请年 2012（2） 
专利权人 SAMSUNG ELEC.（2）

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A