国家/地区 美国（6） 韩国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 香港（2） 日本（2）
IPC部 B（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC H01L021/02（6）
发明人
公开年 2013（3） 2014（3）
申请年 2013（6）
专利权人 SAMSUNG ELEC.（2）

Making graphene structure involves depositing metal layer over silicon carbide substrate, and performing first heat treatment on substrate over which metal layer is deposited to form composite layer and electrically neutral graphene layer.

AHN J, SHIN H, SONG I, AHN J R, SHIN H C, SONG I K

Fabricating graphene film for forming graphene based device e.g. dielectric capacitor, by heating substrate at specific temperature in chamber, introducing carbon source into the chamber and cooling substrate to room temperature.

OZKAN C S, OZKAN M, GUVENC A B, PAUL R K, LIN J, GHAZINEJAD M, PENCHEV M, GUO S, ZHONG J, HAYASHI K

Manufacturing method of graphene device e.g. FET , nanogap device, graphene sensor involves etching protection layer until residual layer made of material for forming protection layer remains on active area of graphene layer.

LEE J, JEON T, KIM Y, LEE C, JUNG Y, LEE J H, JEON T H, KIM Y S, LEE C S, JUNG Y S

Depositing graphene onto a substrate used in polymeric composites, involves transferring solubilized graphene onto the substrate in a liquid medium, where transferring occurs by changing the solubility of graphene in the liquid medium.

PAWLOSKI A R, BENNETT G S, CERNOHOUS J J, KASKE K, SZYMANSKI A E

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A