国家/地区 美国（6）
IPC部 B（6）
IPC大类 B82（6）
IPC小类 C01B（6）
IPC B82Y040/00（5） C01B031/04（5） B82Y030/00（3）
C01B031/02（3） C23C016/26（3） C30B029/02（3）
C01B032/186（2） C23C016/02（2） C23C016/56（2）
发明人 DING G（2） XIE X（2）
公开年 2012（6）
申请年 2011（3）  2012（3） 
专利权人 CHINESE ACAD.（2） DING G（2） SHANGHAI INS.（2） XIE X（2）

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X