国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC H01J037/32（3） C23C014/06（2） C23C016/26（2）
C23C016/455（2） C23C016/505（2） H01L021/285（2）
H01L021/768（2）
发明人
公开年 2021（3）
申请年 2020（4）
专利权人

Semiconductor component useful in plasma reaction device and plasma etching process of process gas e.g. carbon tetrafluoride and oxygen, comprises conductive heat conducting material filled in pores of first corrosion resistant coating.

NI T, CHEN X, ZHU S

Electron-emitting element e.g. cold cathode-type electron source, has coating membrane that is film which transmits electron, and second electrode that is protective film of different material, and comprises electron emission surface.

MURAKAMI K, NAGAO M, KATSUHISA M, MASAYOSHI N

Using deposition system involves loading wafer into processing chamber equipped with RF system, supplying aromatic hydrocarbon precursor into processing chamber, turning on RF power of RF system to decompose aromatic hydrocarbon precursor into active radicals.

WU C, NI I, HSU Y, HUANG J, XU Y, WU Z

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I