国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7） B82Y（4） C01B（4）
B32B（3） C30B（3）
IPC C23C016/02（7）
发明人 DING G（2） JIANG M（2） TANG S（2）
XIE X（2）
公开年 2012（5） 2011（2）
申请年 2011（7）
专利权人 CHINESE ACAD.（2） SHANGHAI INS.（2）

Graphene coated sheet for surface-treated steel plate used in e.g. car material, has graphene layer that is formed on steel sheet structure.

HWANG C C, JUNG Y G, HWANG H N, JEONG J I, YANG J H, JUNG Y, JEONG J, YANG J, HWANG H, HWANG C, GUK H C, IN J J, HUN Y J, GYUN J Y, NA H H

Method for epitaxially growing graphene on silicon carbide wafer involves processing silicon carbide wafer with hydrogen and silane to remove oxide produced on wafer surface, and supplying argon.

LEI T, WANG D, TANG X, LEI J, WANG Y, ZHANG Y, WANG H

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Preparation of diamond graphene composite film involves transforming graphene surface carbon bond crystal lattice type via controlling concentration of carbon source, active hydrogen atom, and matrix temperature, and growing diamond film.

HUA X, LI D, ZUO D, YE Z, ZOU A, ZHOU X, YU Y

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X

Preparation of graphene material involves plating nickel membrane on substrate, adjusting optical path and parameter of laser, introducing argon gas and hydrogen gas, opening the laser, and introducing methane as reaction precursor source.

FANG F, WANG X, CUI Y, WANG F, LI J, WEI Z, FANG X, LUO T

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K