国家/地区 中国（5）
IPC部 C（5） B（3） H（3）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/02（5）
发明人 HONG B（5）
公开年 2012（3）
申请年 2012（2） 
专利权人 HANWHA TECHW.（3） SAMSUNG TECH.（3） UNIV SUNGKYU.（3） GRAPHENE SQU.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.

HONG B H, KIM E S, KIM E, HONG B

Synthesizing graphene, comprises loading catalyst metals into chamber, increasing sizes of grains of catalyst metals, raising temperature inside the chamber while providing vapor carbon source and forming graphene.

SONG Y, KIM H, HONG B, AHN J, AHN J H, HONG B H, KIM H K, SONG Y I

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S

Making graphene comprises preparing graphene member comprising e.g. base member, oxide layer and metal catalyst layer, applying water to graphene member, separating metal catalyst layer from oxide layer and removing metal catalyst layer.

AHN J, HONG B, LEE Y, SONG Y, SONG Y I, AHN J H, LEE Y B, HONG B H, LI R