国家/地区 韩国（4）
IPC部 C（4） H（3）
IPC大类 C23（4）
IPC小类 C23C（4） H01L（3） C01B（2）
IPC C23C016/02（3） C23C016/26（3） C23C016/50（3）
H01L029/16（3） C01B032/186（2） C23C016/513（2）
H01L021/02（2）
发明人 LEE C（4）
公开年 2021（3）
申请年 2020（4）
专利权人 SAMSUNG ELEC.（4）

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Graphene structure used in electronic device, comprises substrate, and directly grown graphene directly grown on surface of substrate and has controlled surface energy, which has increased surface energy of directly grown graphene.

LEE C, LEE S, SHIN H, BYUN K, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE S Y, LEE C S

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X

Formation of graphene for metal wiring for semiconductor device, involves directly growing graphene on non-catalyst substrate based on injecting reaction gas comprising carbon source having preset ionization energy, into reaction chamber.

SONG H, LEE E, LEE C, KIM C, BYUN K, SHIN K, SHIN H, SONG H J, LEE C S, BYUN K E, SHIN K W, SHIN H J