国家/地区 世界知识产权组织（5）
IPC部 C（5）
IPC大类 C23（5）
IPC小类 C23C（5） C01B（3） H01L（3）
IPC C23C016/26（2） H01L021/02（2）
发明人
公开年 2023（5）
申请年 2021（5）
专利权人

High temperature furnace tube for use in semiconductor process, has supporting plate distributed with multiple layers for supporting multiple substrates, where each substrate is placed on each layer of supporting plate.

WANG H, ZHANG S, SHEN H, LV C, ZHOU D, KIM J, PARK J S, WANG J, JIA S, ZHANG X, KIM Y

Wrinkle flattening unit for flattening wrinkles present in graphene composite structure, has rotation portion that comprises outer rotation unit having multiple suction holes communicating with branch passage and supporting one surface of composite structure.

CHO S M, CHO M G, OH H G, CHO M, OHHONGGI

Method for processing semiconductor, involves material layer formed on portion of liner and metal-containing layer, where layer of material comprises graphene and portion of material layer on liner is removed.

MALLICK A B, SINGHA R S, GHOSH S, ROY S S

Growing graphene layer structure on substrate used in opto-electronic device, e.g., solar cell, solar cell, light-emitting diode, organic light-emitting diode, electro-optic modulator, photodetector or diode, involves providing substrate on susceptor in chemical vapor deposition reaction chamber.

THOMAS S, GUINEY I, DIXON S

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U