国家/地区 中国（6）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6） C25D（3） C25F（3）
IPC C23C016/26（6）
发明人 HE L（2） LI P（2）
公开年 2022（6）
申请年 2021（3）  2022（3） 
专利权人

Growing single-layer graphene useful in semiconductor device involves fixing copper foil on cathode, placing in acidic electrolyte, applying voltage between working and counter electrodes, placing copper foil and growing single layer graphene on both sides of copper foil by chemical vapor deposition.

SHEN H, MA Y

Growing large size graphene crystal domain at low temperature by plasma enhanced chemical vapor deposition method, comprises putting high-purity copper foil in faraday cage, and placing cage in plasma-enhanced chemical vapor deposition reaction chamber.

ZHEN Z, ZHANG R, XU Z, HE L, LI N

Preparation method of carbon material used in e.g. micro-circuit, involves obtaining carbon material on surface substrate when conductive medium is solid substrate.

DONG Q, BAI W, CHU D, HE Y

Method for in-situ growth of graphene film on nickel-plated surface of copper metal substrate by laser useful in production, transportation involves pre-coating different solid carbon source on copper-nickel alloy coating, and realizing in-situ growth of graphene film by different types of laser.

CHEN M, QI M, QIANG H, ZHENG X, YE X

Preparation of graphene-encapsulated ultra-thin nickel-63 radiation source film used in preparation of Schottky junction stacked radiation cell, involves preparing nickel chloride film, and putting graphene/nickel chloride/graphene film in vacuum environment for reduction treatment.

WANG X, WANG L, CHEN Z, YANG Y, ZHANG J, SU C, FENG H, LI P, WU W, LUO T, ZHOU C

Graphene-doped silicon carbide core-shell composite polyimide permeable membrane for water treatment, is film made of graphene-doped silicon carbide core-shell structure and polyimide resin gel, where structure is made by etching heavily doped silicon carbide layer in electrochemical etching.

HE L, XU Y, LI P, YIN Z