国家/地区 中国（7）
IPC部 C（7）
IPC大类 C30（7）
IPC小类 C30B（7）
IPC C30B025/12（7）
发明人 JIN H（3） PENG P（3） DING T（2）
公开年 2012（2） 2021（2）
申请年 2011（2）  2021（2） 
专利权人 CHANGZHOU ER.（2） HC SEMITEK Z.（2） PENG P（2）

Crucible used for growing two-dimensional semiconductor material, comprises crucible cover comprising cover plate and cover side wall, and crucible base comprising bottom plate and bottom side wall.

ZHANG L

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T

Epitaxially growing graphene on silicon carbide substrate comprises adding silicon carbide substrate on graphite plate, placing crucible in heating furnace, heating and forming graphene layer on surface of silicon carbide substrate.

LI S, LIU Y, FENG L, QIN L

Graphene growing platform comprises quartz boat, quartz plate, quartz stone and base provided on bottom of quartz plate, where base and shape of bottom of quartz boat are matched with each other.

JIN H, LIU Z, PENG P, WANG Z, ZHOU Z

Graphene thin film for bracket, has winding structure that is provided with inner surface, opposite outer surface, inner and outer edges.

JIN H, PENG P

Bracket for growing graphene, has inner edge and outer edge which are wound more than circle to form structure more than one layer.

JIN H, PENG P