国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC G03F001/62（3） G03F007/20（3） B01J019/08（2）
G03F001/22（2） G03F001/64（2） H01L021/285（2）
发明人
公开年 2022（3）
申请年 2022（4）
专利权人

Pellicle for use in lithography mask assembly for extreme ultraviolet lithography process in semiconductor manufacturing industry to optically transfer patterns onto a substrate, comprises membrane that includes silicon carbide nanostructures with silicon carbide nanotubes.

ONEILL J, HART A H C

Repairing layers of laminate stack or printed circuit board, comprises providing layered structure, identifying fault location in outer graphene layer, preparing surface of outer graphene layer, and applying localized heat on fault location.

MENTOVICH E, ATIAS B, NAVEH D, LEVI A, SMOLINSKY E Z B

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S