国家/地区 韩国（3） 美国（3） 中国（2）
IPC部 B（6） C（5） G（2）
H（2）
IPC大类 B01（6） C01（4） G03（2）
H01（2）
IPC小类 B01J（6）
IPC B01J019/08（6）
发明人
公开年 2022（6）
申请年 2022（6）
专利权人

Continuous mass production of graphene using thermal plasma comprises, generating plasma by injecting, injecting expandable graphite and intercalation graphite, exfoliating graphene by expanding expanded graphite, and drying by hot air.

KYOUNGJEONGBAE, HWAN B J, CHOI S

Reactor e.g. cyclone reactor has volume (Vh) that is adapted to be heated by plasma torch to specified temperature.

BLACKMAN C, CROON L, LJUNGDAHL B

Processing precursor material into product utilizing non-thermal plasma involves selectively converting plasma forming material to non-thermal plasma by microwave radiation, forming one or more streamers, and exposing hydrocarbon precursor material to streamers and microwave radiation.

ZELLER K W, SKOPTSOV G L, MUSSELMAN E T, STROHM J J

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K

A device for preparing graphene load nano metal particles by pulse discharge flash, has first reaction cavity provided with first copper electrode plate and second copper electrode plate with same structure, copper electrode plate connected with electric telescopic rod corresponding to each other.

JIN P, LIU H, WANG Y, LIN X, LI R

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S