国家/地区 韩国（96）
IPC部 B（96）
IPC大类 B01（96） C01（96） B82（25）
C23（18） H01（15） B32（6）
C08（3） C09（3） C22（3）
B04（2） B21（2） C07（2）
H05（2）
IPC小类 B01J（96）
IPC C01B031/02（96）
发明人 KIM H（5） SEO B（5） KIM J（4）
KIM K H（4） MOON J（4） YOON J H（4）
BYUN N（3） HUR S H（3） JEON S（3）
JUNG M（3） KIM S（3） KONG B S（3）
LEE D（3） LEE S（3） LEE S S（3）
公开年 2013（58） 2014（25） 2012（13）
申请年 2012（96）
专利权人 SAMSUNG TECH.（9） KOREA ADVANC.（8） HANWHA TECHW.（7） LG ELECTRONI.（7）
SRC CORP（5） UNIV SUNGKYU.（5） UNIV ULSAN F.（5） UNIV SUNGKYU.（4）
HANWHA AEROS.（3） INHA IND PAR.（3） KCC CORP（3） KOREA RES IN.（3）
RES INST IND.（3） SAMSUNG ELEC.（3） APPLIED CARB.（2） FISHER T S（2）
GYEONG L H（2） JX NIPPON MI.（2） KOREA ADV IN.（2） KOREA ADV IN.（2）

Manufacturing graphene useful as filler for transparent electrode, comprises crushing graphene nanoplate with expanded graphite or exfoliated structure, dispersing in solvent, ultrasonically treating, centrifuging, filtering and drying.

AN J C, KIM Y J, LEE S Y

Apparatus for producing graphene, comprises plasma arc generation unit to generate plasma arc on substrate surface, carbon source supply unit to supply carbon source and laser irradiation unit to irradiate laser and dissociate carbon atoms.

YEONG L M, LEE M Y

Thermal-plasma manufacture of graphene, involves providing thermal plasma torch inside reactor, injecting methane/hydrogen and argon/hydrogen through different paths in torch nozzle, and generating thermal plasma by heating torch.

PARK D W, KIM T, BAEK J

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Reducing graphene that is useful for depositing on thin film, comprises preparing graphene oxide-titanium dioxide solution by mixing graphene oxide to titanium dioxide and alcohol mixture, and reducing graphene oxide by irradiating light.

YOO H J, KIM J K, JUNG Y G, KIM J S

Preparing graphene, comprises primarily irradiating electron beam on graphite, immersing the pure graphite in sulfuric acid, and removing remaining impurities by filtering and then performing ultrasonication on the graphite with surfactant.

KIM H Y, PARK M R, KIM B S, JEONG I S

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing graphene comprises forming metal nanoparticles, forming a pattern by coating or printing, forming conductive metal thin film and fine patter sintering and forming thin film and fine pattern by carbon vapor deposition method.

JEONG S H, CHOI Y M, SEO Y H, LEE S H, RYU B H, PARK J U, AN B W, KIM G U

Producing graphene used for nanoelectronics, sensors, batteries, super capacitors and hydrogen storage applications, comprises mixing and irradiating hydroxyl radical receptor in a solution of graphene oxide.

JUNG H, KANG M G, KWON M J, LEE D H

Manufacture of graphene oxide complex for electrode, involves applying ultrasound to mix of graphene oxide dispersed solution and nickel hydroxide precursor solution, such that nickel hydroxide is provided between graphene oxide layers.

KIM J, JIN J, JEON S, YOU H