国家/地区 韩国（6） 美国（2） 世界知识产权组织（2）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC B41M005/10（5） C01B031/02（3） B01J019/08（2）
B41M005/03（2） C01B031/04（2） C01B032/186（2）
C01B032/194（2）
发明人
公开年 2014（2）
申请年 2012（2）  2013（2） 
专利权人 HANWHA AEROS.（2） HANWHA TECHW.（2）

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Transferring graphene, comprises e.g. synthesizing graphene layer on catalytic metal film, laminating flexible transfer film on graphene to obtain first laminated structure, and removing catalyst metal film from first laminated structure.

PARK J S

Controlling method of graphene thickness used for e.g. manufacturing semiconductor device, involves ion-implanting carbon atoms in metal, heating carbon atoms-implanted metal, cooling, and growing graphene on metal.

CHOI S H, KIM S, LEE J S

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Direct transfer method of graphene sheet involves forming laminate of catalyst layer, graphene sheet and substrate, immersing laminate in electrolyte, applying voltage, carrying out electrolysis, and separating graphene sheet.

AHN J H, LEE Y B

Graphene composing apparatus used in semiconductor and display industry, has gas discharge portion which is provided for ejecting gas inside chamber.

KIM S M, LEE H J, KIM J H, KIM K S, LEE S M, JANG B, HWANG B Y, KIM K, CHOI H J, OH C S