国家/地区 日本（4） 韩国（4） 美国（3） 台湾（2） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 B01（4）
IPC小类 B01J（4）
IPC B01J023/755（3） C23C016/02（3） C23C016/26（3）
B01J037/02（2） C01B031/02（2） C01B031/04（2）
C01B032/182（2） C01B032/186（2） C23C016/511（2）
C23C016/56（2）
发明人 MATSUMOTO T（4） IFUKU R（3）
公开年
申请年
专利权人 TOKYO ELECTRON LTD（4）

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Forming method of base film for graphene, involves heating substrate to temperature at which impurities are eliminated as gas, and heating substrate to temperature at which crystal grains of metal are grown in metal film.

NISHIDE D, MATSUMOTO T, KAGAYA M, IFUKU R

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T