国家/地区 美国（6） 中国（4） 世界知识产权组织（3） 韩国（2）
IPC部 B（7）
IPC大类 B05（7）
IPC小类 B05D（7）
IPC B82Y040/00（5） C01B031/02（4） B05D003/00（3）
B32B009/00（3） B82Y030/00（3） C01B031/04（3）
C23C016/26（3） H01B001/04（3） B05D005/12（2）
B32B003/00（2） C23C016/56（2） C23C018/12（2）
C23C018/16（2） C23C018/18（2）
发明人 WANG C（2）
公开年 2012（7）
申请年 2011（7）
专利权人

Method for preparing patterned graphene film, involves soaking substrate in acetone or photoresist peeling solution to remove photoresist or poly(methyl methacrylate) on graphene film to obtain patterned graphene film.

DAI T, YAO Q, ZHANG F

Formation of reduced graphene oxide composite film on medical titanium alloy surface by soaking cleaned titanium alloy piece in sodium hydroxide solution, washing, placing in silane solution and graphene oxide solution, heating, and drying.

CHENG H, LI P, CHENG X, SHU D, WANG C

Manufacture of transparent graphene film for device e.g. display, involves forming graphene oxide thin film on substrate, performing chemical reduction, and carrying out secondary thermal reduction and nitrogen doping.

KIM S O, HWANG J O, LEE D H

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Formation of conductive material used for forming surface cleaning coating, involves applying conductive ink containing electroconductor chosen from carbon nanotubes, graphene and ionic liquid on substrate and drying conductive ink.

ROBERSON L B, WILLIAMS M K, GIBSON T L, TATE L C, SNYDER S J, FORTIER C R

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X