国家/地区 美国（4）
IPC部 B（4） C（2） H（2）
IPC大类 B32（4） B41（2） B44（2）
C01（2） H01（2）
IPC小类 B32B（4）
IPC B32B043/00（4）
发明人
公开年 2014（4）
申请年 2013（3） 
专利权人

Method for transferring graphene to wafer in semiconductor device for microelectronics application, involves exfoliating closest monolayer by mechanically splitting spreading layer in which closest monolayer remains on stressor layer.

BEDELL S W, DIMITRAKOPOULOS C D, FOGEL K E, HANNON J B, KIM J, PARK H, PFEIFFER D, SADANA D K, SALDANHA D K, PARK H S

Separating a composite sheet including atomically thin material i.e. graphene and substrate i.e. copper, comprises applying hypersonic waves to the sheet so as to separate the thin material from the substrate.

STETSON J B, VISS S J

Transferring graphene to fabricate graphene dual junction diode involves forming graphene layer by composing graphene and base layer; depositing self-assembled monolayer and separating combination layer of monolayer/graphene from base layer.

CHOI J S, YU Y, KIM J T, CHUNG K H, YOUN D H, CHOI C G, YU Y J

Method for transferring graphene to manufacture e.g. bipolar junction transistor, involves bonding graphene layer to target layer, and removing sacrificial layer using excimer laser to separate substrate from graphene layer.

WENXU X, LEE J, MOON C, PARK Y, YANG W, KIM Y, XIANYU W, LEE J Y, MOON C Y, PARK Y Y, YANG W Y, KIM Y S, LEE J H