国家/地区 美国（6） 韩国（4） 世界知识产权组织（4）
IPC部 B（6） C（6） H（4）
IPC大类 B32（6） C01（6） C23（6）
B82（5） H01（3） B01（2）
H05（2）
IPC小类 B32B（6）
IPC C01B031/02（6）
发明人 CHOI J（3） CHOI J Y（2） KIM H（2）
SHIN H（2） SHIN H J（2） WOO Y（2）
WOO Y S（2） YOON S（2） YOON S M（2）
公开年 2012（6）
申请年 2012（6）
专利权人 SAMSUNG ELEC.（2）

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H

Making crystalline graphene, used e.g. in electronic device, comprises e.g. performing first thermal treatment by supplying heat to inorganic substrate, and introducing vapor carbon supply source into reactor during first thermal treatment.

SHIN H, CHOI J, WOO Y, YOON S, SHIN H J, CHOI J Y, WOO Y S, YOON S M

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Patterning graphene involves forming passivation material pattern on growth substrate, defining inverse pattern of exposed surface that facilitates graphene growth; and supplying carbon-containing gas to pattern to form patterned graphene.

HOFMANN M, KONG J

Graphene transferring method, involves adhering heat exfoliation sheet with target substrate, and pressurizing heat exfoliation sheet pressurized with graphene according to atmospheric condition.

HONG B H, CHOI J, KIM Y, KIM K S, KANG J, KIM H, CHOI J B