国家/地区 美国（8）
IPC部 B（8）
IPC大类 B32（8） C23（8） C01（7）
H01（6） B82（4） G02（2）
H05（2）
IPC小类 B32B（8）
IPC C23C016/26（8）
发明人
公开年 2013（5） 2014（2）
申请年 2013（8）
专利权人

Use of amine precursor or its ammonium salt for depositing graphene film on substrate by chemical vapor deposition (CVD).

SCHWAB M G, MUELLEN K, SACHDEV H, ITO Y, SCHWAB M G S, MILLEN K

Device having layered structure used as touch screen such as resistive touch screen and self-capacitance touch screen comprises protective layer; three ferroelectric polymer layers; two graphene layers; and substrate.

OEZYILMAZ B, KAHYA O, OZYILMAZ B

Making graphene laminate used in e.g. LCD, comprises forming graphene on graphitization catalyst film, coating surface of substrate with binder layer composition, contacting composition and graphene, curing composition, and removing film.

SHIN H, CHOI J, HAN G, LEE Y

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Transparent conducting film comprises graphene of specified thickness, visible transmittance and surface resistance.

LI G, WANG Y, LEE K

Manufacturing electrical conductor used in e.g. cables and printed circuit boards involves providing base substrate; providing foil; depositing graphene layer on foil to define layered structure; and depositing structure on base substrate.

MARTENS R I

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Preparing graphene for photovoltaic cells involves annealing catalyst substrate in hydrogen gas within chemical vapor deposition chamber at atmospheric pressure and exposing it to gas mixture of hydrocarbon/hydrogen having specific pressure.

VLASSIOUK I V, SMIRNOV S N, PETER W H, SABAU A S, DAI S, FULVIO P F, IVANOV I N, LAVRIK N V, DATSKOS P G