国家/地区 韩国（6） 美国（4） 世界知识产权组织（3）
IPC部 B（7）
IPC大类 B01（7） B82（7） C01（7）
IPC小类 B01J（7）
IPC B01J019/12（7）
发明人 KIM H（3） KIM H J（2） OH I（2）
OH I K（2）
公开年 2009（2） 2014（2）
申请年 2012（4） 
专利权人 KOREA ADV IN.（2） KOREA ADVANC.（2） KOREA INST S.（2）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J

Surface modification of graphene oxide for e.g. sensor lamp, involves forming graphene oxide-polymer nanocomposite by dispersing catalyst mix containing monomer and catalyst in slurry containing graphene oxide dispersed in organic solvent.

YOON K R, PARK M S

Preparing dispersion of graphene particles/sheets in liquid medium comprises providing bar/block of solid material made of graphite, rubbing material on substrate surface and dipping substrate in medium and subjecting medium to ultrasound.

JANOWSKA I, BEGIN D, CHIZARI K, ERSEN O, BERNHARDT P, ROMERO T, LEDOUX M, PHAMHUU CUONG, PHAM H C, PHAMHUU C

Stacked graphene-diamond hybrid material for semiconductor device comprises diamond matrix, and stacked graphene configured to be converted in certain thickness from a lattice plane cut by surface of matrix due to alternative loss of plane.

AHN J, LEE J, LEE S, LEE W, AHN J P, LEE J K, LEE S C, LEE S H, LEE W S, LEE U

Method for processing graphene sheet type-material used for semiconductor integrated circuit device, involves irradiating vacuum UV rays to surface of graphene sheet-type material to remove or modify outermost surface layer of material.

ASANO T