国家/地区 世界知识产权组织（5）
IPC部 B（5）
IPC大类 B82（5） C01（5） B32（2）
G01（2）
IPC小类 B82B（5）
IPC C01B031/00（5）
发明人
公开年 2012（3） 2011（2）
申请年 2011（5）
专利权人

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Manufacture of graphene for nanoelectronics, involves mixing graphite powder with concentrated sulfuric acid, oxidizing using potassium permanganate, reducing and dispersing.

GUBIN S P, CHEGLAKOV A V, BUSLAEVA E Y, TKACHEV S V, GELLER M M, DUDAKOV V B, BUSLAEVA E YU

Growing graphene on silicon carbide substrate comprises positioning silicon carbide substrate in crucible, controlling pressure and heating to growth temperature and growing graphene on surface of substrate.

YAKIMOVA R, IAKIMOV T, SYVAEJAERVI M, SYVAJARVI M, SYVAE;JAE;RVI M

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J

Nanocomposite material, useful to produce electronic device and/or structural material, comprises a substrate, optionally functionalized graphene, optional adhesive component to adhere graphene to substrate and an optional protective layer.

KINLOCH I A, YOUNG R J, NOVOSELOV K S