国家/地区 美国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（3） 日本（3） 韩国（3） 俄罗斯（2）
IPC部 B（6）
IPC大类 B82（6） C01（6）
IPC小类 B82B（6）
IPC B82B003/00（6）
发明人
公开年 2012（6）
申请年 2011（3）  2012（2） 
专利权人

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Manufacture of graphene for nanoelectronics, involves mixing graphite powder with concentrated sulfuric acid, oxidizing using potassium permanganate, reducing and dispersing.

GUBIN S P, CHEGLAKOV A V, BUSLAEVA E Y, TKACHEV S V, GELLER M M, DUDAKOV V B, BUSLAEVA E YU

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S

Obtaining and splitting poly-layer graphane (polygraphane) comprises loosely connecting graphane layers, and using carbon material source loosely coupled graphene layers (printing), which differs from known methods for producing graphane.

NECHAEV YU S

Growing graphene on silicon carbide substrate comprises positioning silicon carbide substrate in crucible, controlling pressure and heating to growth temperature and growing graphene on surface of substrate.

YAKIMOVA R, IAKIMOV T, SYVAEJAERVI M, SYVAJARVI M, SYVAE;JAE;RVI M