国家/地区 德国（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82B（4）
IPC B82B003/00（4） B82Y040/00（3） H01L021/02（3）
B05D005/12（2） B82Y030/00（2） C01B031/02（2）
C01B031/04（2） C23C016/02（2） C23C016/30（2）
C23C016/56（2） H01B001/04（2） H01L021/28（2）
H01L029/16（2） H01L051/00（2）
发明人
公开年 2013（2）
申请年
专利权人

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Forming cleaned nanotube-graphene hybrid thin film on a substrate, comprises depositing the nanotube thin-film over a substrate to produce a layer of nanotube thin-film, and removing impurities from surface of layer of nanotube thin-film.

BOL A A, CHANDRA B, KASRY A, MAAROUF A, MARTYNA G J, TULEVSKI G S

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A

Method for providing electrical connection to portion of graphene layer used in e.g. microelectronic device, involves forming recess that create boundary between first portion of recess and second portion of recess.

HAQUE S, LEHTINIEMI R K, KARKKAINEN A M, LECHNER L, HAKONEN P, HAQUE S M, LEHTINIEMI R, KAERKKAEINEN A