国家/地区 韩国（15）
IPC部 B（15）
IPC大类 B01（15） C01（15） H01（7）
C23（6） B82（5） B32（3）
B05（2）
IPC小类 B01J（15）
IPC B01J019/08（15）
发明人 CHOI I S（4） LEE K J（4） HAN G H（3）
LEE Y H（3） CHOI I（2） CHOI J（2）
CHOI J Y（2） HAN G（2） LEE K（2）
LEE Y（2） SHIN H（2） SHIN H J（2）
公开年 2013（7） 2012（6） 2011（2）
申请年 2011（15）
专利权人 KOREA ADV IN.（4） KOREA ADVANC.（2） SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2）

Device, useful for preparing a graphene, comprises chamber, exhaust outlet, winding unit arranged in locking position, gaseous carbon source placed into chamber with slit, and carbon fiber heating unit connected with extraction unit.

CHOI D G, DAI K C

Manufacture of graphene involves forming carbon-doped metal substrate, melting carbon-doped metal substrate by laser beam, cooling substrate and moving carbon-doped metal substrate in cooling phase.

LEE K J, CHOI I S

Producing graphene comprises doping carbon in metallic board, fusing board with carbon by irradiation, cooling fused metallic board, where carbon moves to metal board surface after cooling and growing grapheme on metal board surface.

LEE K J, CHOI I S

Manufacture of graphene film used for manufacturing touch device, involves forming graphene oxide film on substrate, injecting nitrogen gas and carbon gas phase with chamber, irradiating oxidation laser and reducing to graphene film.

TAE H K, JONG H P, HEON K T, HYUN P J

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Manufacture of oxidation graphene involves exposing ultraviolet ray exposure is exposed at wavelength of 160-200 nm,preferably 180-190 nm.

HUI H G, HUI L Y, HAN G H, LEE Y H

Manufacture of graphene sheet involves adding light energy to bulk graphite in solvent.

KWANG H R, TAE G C, CHANG I H, YEON S K

Production of graphene involves pumping reaction pipe, cyclone, and collection portion in conduction thermal plasma device, producing plasma, injecting quenched gas from upper side of reaction pipe, heat-decomposing, and cooling.

KIM J H, HWANG K T, MIN K S, CHO W S, KIM K J

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I