国家/地区 中国（4）
IPC部 C（5） H（2）
IPC大类 C01（5） H01（2）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 WANG C（5）
公开年 2021（3） 2022（2）
申请年 2021（5）
专利权人

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Preparation device for graphene film transfer isolation layer comprises heating part, sublimation part and condensing part from bottom to top, where sublimation unit comprises bottom end sealed and containing frame of upper end opening.

JU Y, WANG C, WANG W, WANG D

Preparation of nitrogen-doped graphene aqueous slurry by cleaning nickel foil by diluted hydrochloric acid, placing foil in vacuum chemical vapor deposition device reaction chamber, introducing porphyrin, heating, reacting and circulating.

NAN W, WANG J, WANG C, YAN S

Preparing graphene involves using magnesium carbonate as template, preparing composite of graphene and template fluidized bed chemical vapor deposition method, removing template agent in composite of graphene and template agent by pickling, and adding pickled filtrate with carbonate solution.

MA X, WANG X, WANG C, SONG Y, YAN Z, GAO J

Preparing graphene film by carbon dioxide combined low pressure chemical vapor deposition comprises cleaning the metal substrate and placing into a reaction furnace for vacuumizing and performing high temperature annealing treatment.

LI X, ZHAO B, ZHANG Q, YANG X, WANG R, ZHOU T, WANG C, YUAN L