国家/地区 台湾（3） 美国（3） 世界知识产权组织（3） 德国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC H01J037/32（4）
发明人
公开年 2022（2）
申请年 2021（4）
专利权人 APPLIED MATE.（3）

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A