国家/地区 美国（4） 中国（2） 韩国（2）
IPC部 C（6） B（4） H（4）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C23C016/505（6）
发明人 BRODEUR C L（2） BYUN K（2） BYUN K E（2）
LEE C（2） LEE C S（2） NAGEL C J（2）
SHIN H（2） SHIN H J（2） SHIN K（2）
SHIN K W（2）
公开年 2022（3） 2023（3）
申请年 2022（6）
专利权人 QUANTUM ELEM.（2） SAMSUNG ELEC.（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Reactor assembly comprises gas inlet and one or more gas outlets and reactor chamber containing nanoporous carbon material arranged within cup and covered with cap, where first porous frit defining floor of reactor chamber arranged within cup and covered with cap, and second porous frit.

BRODEUR C L, NAGEL C J

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D