国家/地区 中国（89）
IPC部 C（89） B（21） H（21）
G（6）
IPC大类 C01（89） C23（20） H01（17）
C22（6） B21（5） B30（5）
H05（5） B01（4） B82（4）
C04（4） G01（4） B22（3）
B32（3） C09（3） C30（2）
IPC小类 C01B（89）
IPC C01B032/186（89）
发明人 ZHANG Y（12） DUAN Y（10） SHAO L（10）
SHI H（10） LI X（9） LI Z（8）
HUANG D（7） WANG J（6） WANG Z（6）
CAI J（5） LI J（5） LIU Z（5）
XU X（5） BAI Y（4） JIANG H（4）
公开年 2022（64） 2023（25）
申请年 2022（89）
专利权人 CHINESE ACAD.（10） CHONGQING GR.（10） CHANGZHOU 2D.（5） JIANGSU JIAN.（5）
GUANGDONG MO.（4） CHANGZHOU SI.（3） UNIV SOUTHWE.（3） BEIJING GRAP.（2）
FUJIAN MINXI.（2） SAMSUNG ELEC.（2） UNIV BEIJING.（2） UNIV KUNMING.（2）
UNIV NORTHWE.（2） UNIV SHAANXI.（2） UNIV SOOCHOW（2） UNIV XIAMEN（2）
UNIV ZHEJIAN.（2）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Production device with graphene recycling structure, has graphene top portion that is fixedly connected with gas conveying box, and inner top graphene of production device main portion is connected with air inlet pipe.

ZHU J

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Reaction furnace for graphene, has baffle that blocks gas to advance when placing chamber is not provided with growth module, and growth module that lifts baffle plate, so that airflow is discharged through exhaust port.

XIE G, XIA L, BAI Y

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Device for growth of graphene comprises reactor, detection chamber, gas mixer, adsorption sieve body and vacuum pump, where reactor is provided with multiple groups of growth substrate for growth, graphene side of reactor is connected.

BAI Y, WANG R, XIE G

Method for converting waste plastic into vertical graphene nano-sheet array, involves cleaning and cutting waste plastic, obtaining pre-treated waste plastic and sequentially placing substrate material and plastic prepared in quartz tube of plasma system.

ZHOU L, XIA X, LI C, ZHANG Y