国家/地区 韩国（11） 美国（8）
IPC部 C（11）
IPC大类 C01（11）
IPC小类 C01B（11）
IPC C01B031/04（7） C01B031/02（4） H01G011/32（3）
C01B032/182（2） C01B032/184（2） H01L021/02（2）
H01L029/16（2）
发明人 CHOI C G（3） CHOI H K（3） CHOI J S（3）
YU Y J（3） CHUNG K H（2） GYOO K I（2）
KIM J T（2） KIM J Y（2） KYU Y I（2）
NA K B（2）
公开年 2016（3） 2015（2） 2018（2）
申请年 2014（4）  2016（2）  2017（2） 
专利权人 ELECTRONICS TELECOM RES INST（11）

Forming heterojunction structure used e.g. in material engineering, comprises providing graphene pattern on substrate, applying current to heat graphene pattern and forming two-dimensional material layer on graphene pattern.

YU Y, JUN Y Y

Three-dimensional graphene structure preparation involves forming graphene precursor by heating carbohydrate and gas generator, forming graphene structure having cavity by carbonizing graphene precursor, and then forming nanopores.

KIM T, YOU I, KIM B N, KIM I G, JUNG S, PARK S, YOUNG K T, KYU Y I, NA K B, GYOO K I, HOON J S, JUN P S

Manufacturing electrode used for capacitor, comprises forming an oxidized graphene thin film by applying composition containing oxidized graphene on a substrate, and irradiating obtained graphene oxide film with light.

SUK Y Y, KYU Y I, HWAN S J, NA K B, GYOO K I, HONG S

Photo detector for detecting incident light by using arrangement of single-layer graphene and multi-layer graphene, has first electrode formed at end of single-layer grapheme, and second electrode formed at end of multi-layer graphene.

KIM J T, CHOI C G, YU Y J, CHUNG K H, CHOI J S, CHOI H K

Transferring graphene layer, comprises e.g. producing self-assembled monomolecular layer on first substrate, producing adhesive layer and supporting layer on monomolecular layer, and removing first substrate and monomolecular layer.

LIM J T, LEE H, LEE J I, CHU H Y, KWOM B H, MOON J, KIM J Y, YU B G, HAN J H

Gene amplifying and detecting device comprises a gene amplifying chip including a chamber formed in it, a reaction solution filled in the chamber and including a fluorescent material, a light source, a light detector, and graphene heaters.

CHUNG K H, KIM J T, CHOI Y H, CHOI C G, CHOI H K, YU Y J, YOUN D H, CHOI J S

Method for growing single-layer graphene used for graphene device, involves forming silicon oxide layer, forming multilayer catalyst layer having nickel and copper layers with preset thickness ratio, and growing single-layer graphene.

CHOI J S, CHOI H K, KIM K C, YU Y J, KIM J S, CHOI C G

Manufacturing graphene-ionic liquid composites for electrode materials of supercapacitors, by dispersing graphite oxide composites and ionic liquid-composites into solvent, adding sodium borohydride, and then applying thermal energy.

KANG K, KIM J, KIM K M, KIM S, LEE Y G, SHIN D O

Manufacture of graphene hybrid material for e.g. for biological sensors involves preparing nanoparticles, biomaterial solution, and graphene oxide solution and mixing with biomaterial solution to form biomaterial-coated nanoparticles.

YUN Y, SONG K, YUN Y J, SONG K B

Manufacture of via electrode involves forming via hole at substrate, forming catalyst layer at sidewall and bottom of via hole, and forming graphene layer in via hole by exposing the catalyst layer to solution mixed with graphene particles.

KIM D, BAEK K, PARK K, PARK J M, KIM Z S, KIM J Y, JEONG Y S, DO L, KIM D P, BAEK K H, DO LEE M