国家/地区 韩国（43） 美国（11） 世界知识产权组织（10）
IPC部 B（43）
IPC大类 C01（43） B01（29） B82（16）
H01（8） C23（7） G01（3）
B32（2） C25（2）
IPC小类 C01B（43）
IPC C01B031/02（31） C01B031/04（18） B82B003/00（12）
B01J019/08（7） B01J019/10（7） B01J019/12（7）
B82Y040/00（5） C23C016/26（5） B82Y030/00（4）
H01B001/04（4） B82B001/00（3） B01J006/00（2）
B01J020/20（2） B01J020/30（2） B01J023/755（2）
发明人 OH I K（6） CHOI I S（5） JEON S（5）
KIM S O（5） LEE K J（5） KIM H（4）
KIM H J（4） LEE H S（4） OH I（4）
SEO T S（4） CHOI M H（3） HONG S（3）
JUNG J H（3） PARK D Y（3） VADAHANAMBI S（3）
公开年 2013（16） 2014（7） 2015（7） 2016（4） 2017（4） 2011（2） 2012（2）
申请年 2012（13）  2011（10）  2014（6）  2015（6）  2013（4）  2016（2） 
专利权人 KOREA ADVANCED INST SCI TECHNOLOGY（43）

Manufacturing copper nano-wrinkle structure useful as an electrocatalyst to convert carbon dioxide into carbon material, comprises e.g. generating graphene on copper substrate using chemical vapor deposition.

JUNG H T, KIM J Y, JUNG W B

Manufacturing graphene used in field effect transistor, supercapacitor, hydrogen generation or storage, solar cell, photocatalyst and biosensor, comprises forming the graphene by unzipping doped carbon materials by an external stimulus.

KIM S O, LEE H J, LIM J, KIM S

Preparing three-dimensional porous graphene for adsorbing carbon dioxide and hydrogen, involves dispersing graphene oxide ester and organic linking material containing amine group in solvent.

COSKUN A, SONG K S

Porous nanostructure used for e.g. hydrogen storage material and vibration absorber, comprises graphene layer comprising laminated graphene and having pores formed on surface or inside, and metal particles embedded in graphene filler.

JUNG J, KIM H, OH I, OH J, JUNG J H, KIM H J, OH J H

Graphene-nanomaterial complex includes nanomaterials which are disposed between graphenes that are not disposed on same plane to form three-dimensional graphene structure, in which graphenes, nanomaterials or both form electrical network.

HONG S H, JUN G H, OH J Y, RYU H J, GWANG H J, HO J R, JAE Y O, SOON H H

Apparatus for manufacturing graphene, comprises reaction chamber for providing internal space in which graphene growth plate is accommodated.

CHOI I S, CHOI M H, LEE H S, LEE K J, PARK D Y, PARK J H

Manufacture of graphene involves supplying carbon source having carbon-carbon triple bond(s) into chamber having substrate, and irradiating light from flash lamp to carbon source such that graphene is formed on substrate.

CHOI I S, CHOI M H, LEE H E, LEE H S, LEE K J, PARK D Y

Producing graphene, comprises coating a solid carbon source material on a catalytic metal, irradiating the solid carbon source material with light, and forming graphene from the solid carbon source material on the catalytic metal.

CHOI I S, CHOI M H, LEE H S, LEE K J, PARK D Y, PARK J H

Locally reducing graphene oxide useful for electronic devices and semiconductor material, comprises e.g. preparing a graphene oxide thin film, and forming a self-reactive layer on upper surface of the graphene oxide thin film.

HO J R, SE G B, SEOUNG W K, SEUNG S K, WOO J L

Producing graphene quantum dot of core-shell structure useful in light emitting electrical element, comprises e.g. mixing graphene quantum dot solution and capping agent by dissolving graphene quantum dot in solvent, and removing solvent.

KIM B J, LEE D C, PAEK K Y, YANG H S