国家/地区 韩国（5）
IPC部 C（5） H（2）
IPC大类 C01（5） H01（2）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人
公开年 2016（3） 2015（2）
申请年 2014（5）
专利权人 POSTECH ACADIND FOUND（5）

Graphene with band gap, comprises graphene and alkali metal ion, and has controlled size.

JIN W C, SI J S

Manufacturing method of silicon carbide semiconductor device, involves forming protective layer on silicon carbide substrate into graphene, activating impurity, and removing protective layer.

KYEONG K C

New 2,2'-bipyridine-containing metallic complexes useful in graphene-metal complex composite for electronic device, preferably field-effect transistor, light detecting device, capacitor, battery, solar cell and light-emitting diode.

OH J H, LEE E K, LIU X

Producing graphene thin film, comprises producing precursor layer using coal tar or coal tar pitch on first substrate, producing catalyst layer on precursor layer, heat treating catalyst layer under inert gas atmospheric, and cooling.

LEE T W, SEO H K

Producing graphene quantum dot, useful as photocatalyst for organic light emitting device and solar cells, comprises thermal decomposing graphene oxide under solution containing solvent and surface stabilizer.

RHEE S W, KWON W