国家/地区 中国（3） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4） C23（2）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人 XIE X（3） DING G（2） JIANG M（2）
公开年 2015（2）
申请年 2013（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（4）

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z

Rapid thermal processing method for preparing graphene powder in air atmosphere comprises putting precursor of graphene in non-sealing cover crucible, then carrying out heat treatment to obtain graphene powder.

DING G, JIANG M, LI X, SUN J, XIE X