国家/地区 中国（7）
IPC部 C（7）
IPC大类 C01（7） B01（4） H01（4）
B82（3） C23（2）
IPC小类 C01B（7）
IPC C01B031/04（7）
发明人 KIM T（7）
公开年 2014（2） 2017（2）
申请年 2016（2） 
专利权人 LG ELECTRONI.（2） SNU R DB FO.（2） UNIV GACHON .（2） UNIV GACHON .（2）

Making graphene metal nanoparticle-composite, comprises e.g. making graphene by applying shearing force to solution of graphite-based material, preparing metal nanoparticles by applying shearing force to solution of e.g. metal precursor.

KIM T Y, HONG J P, KIM T, HONG J

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Manufacture of graphene used in manufacture of e.g. display apparatus, involves adding graphite-based material to fluid containing solvent and rotating fluid to perform delamination of graphite-based material by shear force.

KIM T, PARK S, YOUNG K T, JUN P S

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Graphene dispersion used for manufacturing graphene-ionic liquid polymer composite, comprises graphite dispersed in ionic liquid.

SUH K S, KIM J E, KIM T Y, KIM J, KIM T

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T