国家/地区 韩国（5） 美国（4） 中国（3）
IPC部 C（5）
IPC大类 C01（5） H01（3） C23（2）
G01（2）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人 KIM T H（5）
公开年 2014（2） 2017（2）
申请年
专利权人 LG ELECTRONI.（2） SNU R DB FO.（2）

Preparing graphene oxide modified magnetic bead involves sulfonating porous polystyrene-di-vinyl benzene beads to obtain sulfonated beads, which are adsorb and selected from ferrous salts, ferric salts or mixtures, and magnetizing.

JUN B H, KIM D E, BAEK A R, XUAN H P, KIM T H

Triboelectric type graphene-based touch sensor device for electronic equipment, has triboelectric for generating triboelectric potential by contact of friction material whose contact is detected based on current change in channel layer.

KIM S W, KIM T H, KHAN U, RYU H J, CHOI S, KANG M, KIM D H, SEUNG W C, KIM S, HO K T, HAN J R, SEUNG C, KIM D, WAN C S

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Graphene nanostructure fabricating method for semiconductor device, involves performing anisotropic etching by using aligned oxide nanostructure as mask, and removing remaining oxide nanostructure after anisotropic etching.

HONG S, KIM T H, LEE J, HONG S H, LEE C Y, KIM T