国家/地区 中国（7）
IPC部 B（7）
IPC大类 B82（7） C01（7） H01（2）
IPC小类 B82Y（7）
IPC B82Y030/00（7）
发明人 LIN S（7）
公开年 2013（2） 2017（2）
申请年 2013（3）  2017（2） 
专利权人 HANGZHOU GEL.（2）

Preparing photo-thermal conversion porous structure comprises e.g. preparing sodium hydroxide, ammonium persulfate alkaline solution, using ultrasonic to disperse graphene oxide in distilled water to obtain graphene oxide solution, depositing graphene oxide on surface of foam copper and drying.

LIN S, LV F, NIE H, CHENG D

Preparation of monolayer graphene involves selecting high pressure reaction vessel as solvothermal reaction vessel, preparing lithium hexafluorophosphate electrolyte/graphite precursor solution, cooling and centrifuging.

YANG Z, GUO T, AI J, LIU J, ZHANG Y, HU H, XU S, CHEN G, LI F, LIN S

Preparing doped metal oxide/graphene composition nano material comprises e.g. preparing graphene oxide aqueous solution by improved Hummers method, carrying out centrifugal washing, taking metal ion salt, urea and dispersing ultrasonically.

LI Q, PAN Q, LIN S, JU X, WANG T

Preparation of composite material involves adding graphene to carbon nanotube and uniformly mixing, grinding mixture and dehydrating, refining mixture and dehydrating, grinding mixture and processing, drying mixture, and packaging.

LEI L, LIN S

Composite nanophase absorbing material obtained by uniformly loading cobalt and graphene on a thin surface, and drilling to form nano-granule.

LIN S, WANG F, YU J, ZHU H

Preparation of fluorinated graphene using atomic layer deposition device used for, e.g. electronic device by etching copper foil with graphene using corrosive solution, transferring in substrate, washing and reacting with fluorinating agent.

DONG C, LIN S

Chemical vapor deposition method for preparing dual-layer graphene involves regulating flow of carbon source gas and pressure intensity of reaction chamber under atmosphere of reductive gas and inert gas, and growing graphene film.

DONG C, LIN S