国家/地区 中国（15）
IPC部 C（15）
IPC大类 C01（15） C23（4）
IPC小类 C01B（15）
IPC C01B031/04（11） C23C016/26（4） C01B032/184（3）
C01B032/186（2） C01B032/19（2）
发明人 PENG P（15）
公开年 2014（4） 2013（3） 2015（3） 2017（2） 2018（2）
申请年 2013（6）  2014（4）  2016（2）  2017（2） 
专利权人 CHANGZHOU ER.（9） CHANGZHOU 2D.（6） UNIV PEKING（2） UNIV ZHOUKOU.（2）

Preparation of graphene film involves placing high purity soluble salt into corundum boat, putting into CVD tubular furnace, vacuuming, filling inert gas, cleaning cavity, and introducing hydrogen, argon or nitrogen gas.

PENG P, WANG Z, TIAN Z, SONG J, LI M, REN L, FU Y

Graphene production device has controller that is respectively connected with three electromagnetic valves, water flow accelerator, heating element and temperature sensor through electric conductor, and connected with external power supply.

MENG Y, CAI B, SHI X, PENG P

Dispersion of multilayer graphene comprises taking multilayer graphene into acidic oxidizing liquid, mixing, heating, stirring, removing acid, obtaining graphene aqueous slurry, adding solvent, diluting, and obtaining graphene.

JIN H, SONG Q, PENG P, ZHOU Z, MA L

Preparation of ordered structure graphene material involves dissolving graphene oxide in water and then uniformly mixing, ultrasonically processing mixture and then dissolving in electrolyte, freezing mixture and quenching, and drying.

MENG Y, CAI B, SHI X, PENG P

Preparation of wrinkle-free graphene involves selecting high-purity copper as substrate, using hydrochloric acid or nitric acid solution to remove surface impurities and placing cleaned copper in chemical vapor deposition furnace.

FU Y, GONG X, PENG P, REN L, WANG Z, GU Y, TIAN Z

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

Preparing graphene thin film used as transparent conductive electrode, involves spacing carrier by spacer and superimposing metal substrate to obtain multi-layer metal substrate structure, and transferring carrier to reactor.

JIN H, PENG P, WANG Z, ZHOU Z, CHANG B, CHEN X, YIN H

Preparation of graphene involves heating metal substrate in reaction chamber, supplying gas mixture of oxygen and inert gas to reaction chamber, feeding mixed gas of hydrogen and inert gas and supplying hydrogen and carbon source.

JIN H, LIU Z, PENG P, ZHANG Z, ZHANG W, ZHOU Z

Transferring graphene comprises transferring graphene grown on a double-sided film substrate to a target substrate.

GU Y, JIN H, PENG P, WU W, LOU X

Graphene growth device comprises graphene deposition system, deposition furnace and trolley.

JIN H, LIU Z, PENG P, ZHOU Z