国家/地区 美国（4）
IPC部 B（4）
IPC大类 B01（4） C01（4） B82（3）
H01（3）
IPC小类 B01J（4）
IPC B01J019/08（4）
发明人
公开年 2013（4）
申请年 2012（2） 
专利权人

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Preparing graphene which is used for construction of devices e.g. integrated circuits, comprises bombarding a surface of a silicon carbide substrate with ions (of e.g. gold), and annealing a volume of the substrate at the bombarded surface.

GILA B P, APPLETON B R, LEMAITRE M G, TONGAY S

Method of etching atomic layer of graphene used for semiconductor device, involves adsorbing reactive radical to surface of graphene, and irradiating energy source to graphene to which reactive radical is adsorbed.

YEOM G Y, LIM W S, MIN K S, KIM Y Y, OH J S