国家/地区 韩国（8）
IPC部 B（8）
IPC大类 B01（8） C01（8）
IPC小类 B01J（8）
IPC B01J019/10（8）
发明人
公开年 2014（4） 2015（4）
申请年 2013（8）
专利权人 KOREA INST S.（2）

Producing graphene useful for manufacturing pulse laser resonator of pulse laser, comprises providing a substrate to grow graphene by depositing a metal film on a transparent supporting member, and growing by laser irradiating the substrate.

SONG Y W, PARK J H, DEBNATH P

Graphene microparticles useful in electrode active material for e.g. electrochemical device, comprises three-dimensional open pore channels connected to each other due to the empty space between the crumpled multiple graphene unit sheets.

AHN D, LEE S I, PARK S H, KIM K B

Mechanochemical method of controlling size of graphite involves adding reducing agent to graphene oxide dispersion solution, centrifuging dispersion solution, and dispersing residue in organic solvent by mechanochemical method.

JANG J, SHIN K Y

Producing carbon nanotube-graphene composite, comprises preparing a mixture of graphene oxide and catalyst, and heat-treating at in inert atmosphere to obtain carbon nanotube from catalyst distributed on surface of oxidized graphene.

YOON D M, KWON S G, KWON J, KIM M S, PARK Y M, KWON J M

Manufacturing copper oxide-zinc oxide/reduced graphene oxide composite, comprises oxidizing graphite to obtain graphene oxide, mixing graphene oxide with ethylene glycol, ultrasonically vibrating, adding reducing agent, and reducing.

NAM S C, SONG H S, YOON Y, JEONG S K, PARK S Y, PARK M G, AHN W, JEONG M H, CROISET E, CHEN Z

Manufacture of high quality graphene for high quality graphene film and electronic material, involves filling carbon rod, graphite powder and metal catalyst, filling buffer gas into reaction chamber, and evaporating in reaction chamber.

KIM M J, OH I S, KU B C

Manufacturing three-dimensional graphene-polymer complex comprises mixing graphene oxide and hydrophilic liquid containing magnetic nanoparticle to obtain liquid droplet, heating liquid droplet, soaking in monomer solution and polymerizing.

HAN D J, SEO T S

Fabricating single-layer graphene on silicon carbide wafer used as channels of field-effect transistor array, comprises disposing graphene layers on carbon buffer layer of wafer, and converting buffer layer to single-layer graphene.

WOO Y, YOON S, SHIN H, LEE D, CHOI J, WOO Y S, YOON S M, SHIN H J, LEE D W, CHOI J Y