国家/地区 美国（7） 韩国（5） 中国（4） 世界知识产权组织（4） 欧洲专利局（EPO）（3） 日本（3）
IPC部 B（8）
IPC大类 B32（8） C01（8） B82（5）
H01（5） C08（2） C09（2）
C23（2） H05（2）
IPC小类 B32B（8）
IPC B32B009/04（8）
发明人
公开年 2014（5） 2013（2）
申请年 2013（8）
专利权人 INT BUSINESS.（2）

Composite panel comprises a layer of material comprising a polymeric matrix material, and a large area graphene sheet embedded in the layer of material, where the large area graphene sheet includes nanoperforations.

BULLOCK S E, NEWELL C M

Solid-state device structure for separating and isolating graphene monolayer, has single crystalline monolayer of graphene that is arranged on substrate by single transfer process and has surface area of greater than specific inches.

DIMITRAKOPOULOS C D, FOGEL K E, KIM J, PARK H

Graphene for electronic equipment e.g. display device, battery, photoelectric device and solar cell, contains nitrogen-containing organic compound.

NA D H, PARK E S, RYU J C, WON D K, CHEOL R J, NA D, WON D, PARK E, RYU J, YUAN D, YOO J H, LIM Y M, HUH Y

Thermal radiation film for e.g. electronic devices comprises heat-transfer layer formed by uniformly dispersed graphene microparticles and carbon nanotube.

KAGAWA S, SEIJI K

Partially-reduced graphene hierarchy component-coupled component for e.g. graphene electrode film for graphene capacitor for electric vehicle, is obtained by connecting partially-reduced graphene hierarchy components.

TANG JIE, ZHANG FEIFEI, SHINYA NORIO, CHENG QIAN, QIN LUCHANG, TANG J, ZHANG F, SHINYA N, CHENG Q, QIN L

Preparation of graphene foam/polymer fiber 3D composite foam film involves concentrating aqueous graphene oxide solution, coating sol on smooth substrate, machine rolling, coating obtained film with 3D polymer fiber, and reducing.

XIAO Q, LUO Z

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T