国家/地区 韩国（7）
IPC部 B（7）
IPC大类 B41（7） C01（7） C23（3）
H01（3） B01（2） B32（2）
B82（2） C03（2）
IPC小类 B41M（7）
IPC B41M005/10（7）
发明人 HONG B H（2）
公开年 2014（2）
申请年 2010（2） 
专利权人 GRAPHENE SQU.（2） HANWHA AEROS.（2） SAMSUNG TECH.（2）

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Transfer of graphene used for e.g. solar cell, involves vacuum thermal-processing graphene laminate of support substrate and graphene, and transfer-target substrate to transfer graphene of graphene laminate to transfer-target substrate.

LEE B H, LEE S K, LEE S C

Manufacturing graphene film involves preparing catalyst metal having at least surface on which graphene is formed, forming support layer on graphene, and isolating graphene and support layer from catalyst metal.

NA D, LEE E, YOON J, NA D H, LEE E K, YOON J H, LI Y

Transfer method of graphene for manufacture of e.g. electrode, involves adhering self-adhesive film on graphene provided on material, removing graphene-adhered film from material, transferring to other material and removing film.

HONG B H, KIM S J, PARK M J, JO I S

Graphene transfer method involves attaching end of stacked structure having catalyst metal, graphene and supporting body, to a point of target film; forming second structure by removing the metal and transporting film in roll-to-roll manner.

KIM N, KIM N Y

Roll-to-roll transfer of graphene for producing graphene roll, involves transferring graphene layer on material to substrate by passing through roller portion, immersing obtained laminate into etching solution, and removing material.

AHN J, BAE S, HONG B H, KIM H K, BAE S K, JANG H, JANG S, KOO J B, HONG B, KIM H, HUI H B, HYEON A J, GANG B S, GEUN K H

Manufacture of graphene film used for manufacture of electronic device, involves contacting amorphous carbon film with metals chosen from gallium, indium, tin and antimony.

FUJITA JUNICHI, FUJITA J I, FUJITA J