国家/地区 中国（3） 美国（3） 韩国（2）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B021/064（5）
发明人 LEE C（2） LEE C S（2） LI C（2）
SHEN X（2） SHIN H（2） SHIN H J（2）
公开年 2021（2） 2022（2）
申请年 2021（5）
专利权人 SAMSUNG ELEC.（2）

Magnetic field responsive hexagonal boron nitride particles comprises hexagonal boron nitride particle that responds to magnetic field, which has adsorption layer of monolayer of graphene oxide or partially reduced oxide on surface of scale-like or plate-like hexagonal boron nitride particle.

ZAIMA H, MATSUMOTO N, SUGIMORI S, ONAKA N J, ITO G

Black phosphorus-two dimensional material complex for electronic device, includes first and second two-dimensional material layers being configured to be coupled to each other by van der Waals force, and black phosphorus sheet in which phosphorus atoms are covalently bonded.

YOON S, LEE C, HWANG H, SHIN H, SEOL M, SUK S H, SHIN H J, HWANGHYUNTAE, LEE C S, YUNE S I, YIN S, LI C, SHEN X

Coating process of substrate ordered mesoporous graphene, comprises dispersing substrate in potassium oleate or sodium oleate solution, ultrasonically stirring, adding ferric nitrate solution, washing with water after precipitation, freeze-drying precipitate, pyrolyzing, etching, and graphitizing.

YANG D, CAI Q, DONG A

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R